| 1. | Procedures for determining threshold current of semiconductor lasers
半导体激光器阈值电流的测定程序 |
| 2. | However , ingaas strained - layer single quantum well lasers , optimized for low threshold current and low series resistance , have a highly elliptical beam structure emanating from the laser facet
但是报道的技术中多是针对圆对称光束或近圆对称光束。 |
| 3. | The lowest threshold current 1 . 8ma is achieved with continuous - wave at room temperature , the maximum output power is 7 . 96mw . for the resesrch work on the fabrication procedures , we discusses selective oxidation and selective wet etching
利用湿法氧化和选择性腐蚀相结合工艺研制出室温连续工作的vcsel ，最低阈值电流为1 . 8ma ，输出功率为7 . 96mw 。 |
| 4. | Green - mode which provides off - time modulation to linearly decrease the working frequency under light - load conditions and power limiting which will turn off the transistor when peak current of inductor reaches the threshold current
同时该电路集成了能在轻负载情况下自动降低频率的绿色模式以及能在电感峰值电流过高时关断调整管的功率限制模块,降低了系统的功耗。 |
| 5. | Based on these analyses , we see that the si - based quantum - dot laser has higher gain and differential gain , its threshold current is more lower and the threshold current is insensitive to temperature when si - based quantum - dot laser compares with normal semiconductor laser and quantum - well laser
分析表明，与普通激光器和量子阱激光器相比， si基量子点激光器有更高的增益和微分增益，阈值电流更低，阈值电流对温度更不敏感。 |
| 6. | As a result , a theoretical model of fiber grating external cavity semiconductor lasers including the reflectivity distribution of fiber grating has been presented in this paper . based on the model , the laser characteristics such as the threshold current , mode suppression ratio etc . have been specified
利用该模型对光纤光栅外腔半导体激光器的阈值电流、模式抑制比等进行了研究，得到了一些新的结论，并对此结论作出了合理的解释。 |
| 7. | The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density , high characteristic temperature and high cod limit , which make ld lasers achieve higher output power and longer ufe . therefore , ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers
Ingaas / gaas应变量子阱激光器具有级低的阈值电流密度、较高的特性温度和较高的光学灾变损伤阈值，这使得激光器具有更高的输出功率和更长的寿命。因此ingaas / gaas应变量子阱结构可以用于大功率半导体激光器的制备。 |
| 8. | Vertical - cavity surface - emitting lasers ( vcsel ' s ) have distinct advantages over conventional edge emitting lasers , such as small divergence angle , single longitudinal mode operation and very low threshold current . they are especially suitable for making two - dimensional ( 2 - d ) arrays as well as vcsel ' s based integrate devices
垂直腔面发射半导体激光器( vcsel )与传统的边发射半导体激光器相比，它具有发散角小、单纵模工作、非常低的阈值电流等优点，尤其它适于二维面阵集成和与其它光电子器件集成。 |
| 9. | The second one : we studied the effect of temperature on performance of lds . it was found that threshold current increase exponentially outpower and slope efficiency decrease parabola and exponentially respectively . coefficient of temperature shift is 0 . 24 / k , wheras characteristic temperature also decrease with rise of temperature
研究了温度对激光器各参数的影响，随着温度的增加，阈值电流呈指数增加，输出功率和斜率效率分别呈抛物线和指数关系递减，同时特征温度也减少，波长随温度的漂移系数为0 . 24nm ，并且总结了一些温度和结构设计方面的关系。 |
| 10. | The results show that if n - dbr is neglected , the theoretical calculations are in good agreement with the references . but our results also indicate that n - dbr has very important influences on the properties of vcsels and if it is not considered , there must be some errors . and double oxide - confining regions offer a method of decreasing threshold current and controlling high order modes
结果表明，当不考虑n - dbr的影响时，我们的理论计算结果与文献报道相符；但通过计算可知n - dbr对vcsel特性有较大影响，如果不考虑会带来误差；同时双氧化限制层为vcsel器件提供了一种降低阈值，抑制高阶横模的方法。 |
